On September 29, the research team led by Professor Song Yun-heub of the Department of Electronic Engineering and Professor Park Jin-seong of the Department of Materials Science and Engineering at Hanyang University announced that they have developed a new Hybrid-Channel(HC) structure and a novel interface material that can dramatically improve the 프랑스 토토사이트 and reliability of next-generation 3D NAND Flash memory for the first time in the world.

3D NAND Flash is a core technology leading the ultra-high-density memory market, but the existing polycrystalline silicon(Poly-Si) channel has low electron mobility, making it challenging to improve 프랑스 토토사이트. Although HC structure research was proposed as an alternative, limitations arose due to interface oxidation and device variability during the crystallization process of oxide semiconductors.

To overcome these limitations, the research team devised a new HC structure that inserts an ultra-thin Ga₂O₃ or Al₂O₃ interfacial layer between the Poly-Si and the ALD(Atomic Layer Deposition)-based oxide semiconductor(In-Ga-O, IGO) channel. As a result, poly-Si interface loss was reduced from the existing 5 nm to 1.7 nm, and interface oxide growth was suppressed from 7.4 nm to 2.5 nm. This improvement halved the threshold voltage variation and significantly enhanced cell current density and mobility. The field-effect mobility recorded more than 100 cm²/V·s, proving the potential of this technology as a next-generation memory device.

This achievement goes beyond merely securing a high-mobility channel in 3D NAND Flash cells; it established foundational technology to implement low-power, high-프랑스 토토사이트 devices by integrating oxide semiconductors into vertical three-dimensional transistor channels. It is expected to expand to the development of high-프랑스 토토사이트 selectors and logic devices, becoming a key technology for next-generation 3D semiconductors, and significantly contribute to the advancement of high-density, ultra-fast, and low-power memory and foundry industries.

The research team said, “This achievement is meaningful as it experimentally verified a novel channel structure and material combination for the first time worldwide,” adding, “It would let a new breakthrough for the future semiconductor industry demanding ultra-high-density and high-performance memory.”

This study was conducted with the support of Samsung Electronics and Regional Innovative Leading Research Center(RLRC) of National Research Foundation, and the results were published online in the September issue of the world-renowned materials journal Advanced Functional Materials (IF=19.0).

In the paper, Enhanced Device Characteristics of Hybrid-Channel (Poly-Si/IGO) 프랑스 토토사이트s with Ga₂O₃ and Al₂O₃ Interlayers by Suppressing Oxidation-Induced Variability for Ultra-High-Density 3D NAND Flash Memory Applications, Hanyang University doctoral student Hwang Tae-won(Department of Materials Science Engineering) and master's student Shin Jung-min(Department of Electronic Engineering) are listed as co–first authors, with Professors Song Yun-heub and Park Jin-seong as co-corresponding authors.