A 해외 실시간 토토사이트 team led by Professor Kim Doo-ry of the Department of Chemistry at Hanyang University has developed a new optical imaging technique that overcomes the resolution limitations of traditional optical microscopes and enables ultra-high-resolution observation of nanoscale defects in semiconductors. The study presents a novel inspection platform capable of addressing the technological constraints of both optical and electron microscopes.

With the advancement of ultra-fine semiconductor manufacturing processes, today’s semiconductors feature structures at the nanoscale—thousands of times thinner than a human hair. In such delicate systems, even minute defects can significantly affect overall performance. However, conventional optical microscopes are hindered by the diffraction limit of light, making it difficult to observe nanoscale structures. Electron microscopes, while offering high resolution, are often time-consuming and costly.

To address this, the 해외 실시간 토토사이트 team developed an imaging technique that induces strong photoluminescence by artificially introducing defects into the silica (SiO₂) structures, a key material in semiconductors. By combining electron beam exposure (a physical stimulus) and thiol aqueous solutions (a chemical stimulus), they successfully induced defects within silica structures and enabled nanoscale imaging that was previously unattainable with conventional optical equipment.

This technique enables the precise detection of silica patterns and defects at the tens-of-nanometers scale—resolution levels previously difficult to achieve with existing optical instruments. Notably, the method can detect various types of defects, such as nanoparticles, line breaks, and delamination, with greater sensitivity than electron microscopes. It also allows material-specific observation by selectively responding to silica, significantly broadening its applicability.

“This research marks a technological breakthrough by enhancing the resolution of optical microscopes by more than five times, enabling clear visualization of nanoscale structures,” said Professor Kim Doo-ry. “It holds strong potential not only in semiconductor inspection but also in fields such as biology and nanomaterials analysis.”

The study was supported by the Basic Science 해외 실시간 토토사이트 Program for Excellent Young 해외 실시간 토토사이트ers under the Ministry of Science and ICT and the National 해외 실시간 토토사이트 Foundation of Korea, as well as by the Korea Toray Science Fellowship funded by the Korea Toray Science Foundation. The findings were published online on July 25 in the internationally renowned journal Journal of the American Chemical Society (JACS), published by the American Chemical Society (ACS). The paper, titled “Super-Resolution Imaging of Semiconductor Nanopatterns Using the Non-Bridging-Oxygen-Hole-Center-Based Photoluminescence Enhancement Effect”, lists researchers Hong Ri-hong and Jeong Ui-don as co–first authors, Ko Ga-eun as a contributing author, and Professor Kim Doo-ry as the corresponding author.