Technology capable of leading the next-generation semiconductor market has been developed. A research team led by Professor Park Hui-joon of the Department of Organic and Nano Engineering, collaborating with Professor Kim Kyeoung-hak's team from the Department of Chemical Engineering, identified a novel approach to simultaneously maximize the performance and stability of perovskite—a promising next-generation semiconductor material—and successfully developed high-performance, long-life thin-film transistors (TFTs).

The basic forms of 토토사이트 bts materials used to make 토토사이트 bts devices include P-type and N-type 토토사이트 btss. P-type 토토사이트 btss are created by adding impurities to pure 토토사이트 btss to increase electron holes (a state with insufficient electrons). N-type 토토사이트 btss are created by adding impurities to pure 토토사이트 btss to increase electrons. 토토사이트 bts devices are made by combining and processing P-type and N-type 토토사이트 btss in specific ways.

Both N-type and P-type devices are required for implementing low-power electronics and integrated circuits, but achieving high-performance P-type devices has been a long-standing challenge in the 토토사이트 bts industry compared to high-performance N-type devices. While perovskite, which has been spotlighted as a next-generation 토토사이트 bts material, can be used to implement P-type devices, most contain lead (Pb), which poses inherent limitations for actual electronic device applications.

The research team noted that eco-friendly tin (Sn)-based perovskite, which is highlighted as an alternative, possesses charge transport advantages such as small effective mass and low scattering characteristics, leading them to determine that excellent performance could be achieved. If the chronic limitations of this material—oxidation and thin-film quality degradation—could be resolved, it would actually be a material with far more potential than anything currently commercialized.

As a result, the research team identified that substituting some cations and anions of perovskite using methylammonium chloride (MACl) could minimize defect density and overcome structural instability, and this strategy simultaneously resolved the oxidation and thin-film quality degradation issues. Based on this, the research team successfully implemented P-type thin-film transistors with top-level performance. Additionally, accelerated life test results predicted that the devices would maintain over 70% of initial performance for approximately 10 years at room temperature, indicating a level suitable for immediate industrial application when combined with encapsulation technology used in OLED commercialization.

In this research, Professor Park Hui-joon of the Department of Organic and Nano Engineering served as the principal investigator overseeing the project, while Professor Kim Kyeoung-hak of the Department of Chemical Engineering was responsible for materials design. Dr. Park Han-sol and Dr. Lee Jong-min (both doctoral course, Department of Organic and Nano Engineering, currently researchers at Samsung Electronics) and Dr. Lee Cheong-beom (doctoral course, Department of Chemical Engineering, currently postdoctoral researcher) served as co-first authors, with Samsung Electronics SAIT participating as a collaborative research institution.

Principal investigator Professor Park stated, "This achievement is the first case of simultaneously achieving top-level electrical performance and long-term stability with tin-based perovskite, demonstrating the commercialization potential of next-generation semiconductor materials that possess both eco-friendliness and high performance," adding, "Expansion into various fields such as next-generation displays, optical sensors, and low-power logic devices is expected."

The results of this research, conducted with support from the Mid-career Researcher Program funded by the Ministry of Science and ICT and the National Research Foundation of Korea, as well as Samsung Electronics, were published online on October 17 in Nature Electronics (IF=40.9), a top-tier international journal in electrical and electronic engineering.