HYU Professor Yoo Ho-cheon’s Team Develops a High-Noise-Based True 토토사이트 계정탈퇴 Number Generation Transistor

A research team led by Professor Yoo Ho-cheon of the Department of Electronic Engineering at Hanyang University has developed a single-transistor-based true 토토사이트 계정탈퇴 number generator (BHN-NTC transistor) capable of effectively generating unpredictable true 토토사이트 계정탈퇴 numbers.

True 토토사이트 계정탈퇴 numbers refer to statistically 토토사이트 계정탈퇴 and inherently unpredictable values. They are essential for cryptographic key generation, security authentication, AI sampling, and physical unclonable functions (PUFs).

In recent years, the increasing use of software-based pseudo-토토사이트 계정탈퇴 number generators (Pseudo-RNGs) in AI and edge computing environments has raised concerns over predictability and low entropy, resulting in security vulnerabilities. This has led to greater demand for hardware-based true 토토사이트 계정탈퇴 number generators (TRNGs) that offer high process compatibility and can be implemented at low cost.

Traditional TRNGs, however, have limitations, including weak noise signals and low integration density. To overcome these challenges, Professor Yoo’s team developed a transistor that structurally amplifies noise and increases entropy without relying on external circuitry.

TRNGs typically exploit the random movement of electrons—known as noise—to generate random numbers. However, conventional TRNGs produce weak noise, necessitating external analog amplifiers and post-processing circuits. This not only reduces integration efficiency and increases chip area and power consumption, but also limits entropy output to just 1 bit per sample.

Professor Yoo’s team addressed these shortcomings with a novel BHN-NTC transistor that features a dual heterojunction structure. This design internally amplifies noise to generate strong entropy signals without external amplification, allowing the device to directly output 3-bit random numbers per sample.

Because the transistor itself replaces analog circuitry, it is well suited for low-power, high-integration systems. This advancement addresses the three key limitations of previous TRNGs—low entropy density, reliance on external circuitry, and limited integration capability.

The research team achieved two critical enhancements using an interlayer material known as PTCDI-C13. First, electron injection was increased to expand the NTC (Negative Transconductance) region. Second, the introduction of an additional heterojunction increased the 토토사이트 계정탈퇴ness of electron behavior.

NTC refers to a phenomenon where the drain current anomalously decreases in a specific voltage range. During this state, both electrons and holes are injected simultaneously, triggering a variety of electron activities such as trap/de-trap and recombination. These result in strong noise, which is ideal for generating statistically high-entropy 토토사이트 계정탈퇴 numbers.

In the developed device, the increased electron injection from the drain electrode expands the NTC region. This allows for clearer distinction among three output states (0, intermediate, and 1), enabling reliable operation in ternary logic circuits. In other words, the device can distinguish between “0,” “1,” and an intermediate logic state, making implementation of three-level logic systems feasible.

The team further maximized this functionality using a heterojunction structure. Unlike typical NTC devices, an additional heterojunction region was introduced to increase trap sites, enhancing the 토토사이트 계정탈퇴ness of electron movement.

This results in more frequent trap-and-release cycles (trap/de-trap) and more intense generation and recombination events, leading to unpredictable and irregular electrical signals. Consequently, the device generates higher levels of noise and a broader range of 토토사이트 계정탈퇴 number outputs.

The structure is designed to intensify and overlap the irregular motion of electrons, and the cumulative effect of multiple heterojunctions further amplifies high-entropy noise. The 3-bit digital 토토사이트 계정탈퇴 numbers generated from this high-entropy noise can be used as inputs for generating high-quality virtual images.

This transistor represents a significant breakthrough in TRNG technology: it generates 3-bit 토토사이트 계정탈퇴 numbers per sample without the need for external amplifiers, thanks to its noise-amplifying structure. The design maximizes 토토사이트 계정탈퇴ness at the structural level and offers excellent circuit integration. It can be easily applied to security chips and edge computing devices.

The device holds particular promise for medical AI applications. Medical AI models must train on various types of patient imagery, such as lung CT scans and organ ultrasound images. However, privacy concerns often make it difficult to use actual patient data.

By inputting the 3-bit high-entropy 토토사이트 계정탈퇴 numbers into generative AI models, synthetic medical images can be produced that resemble real data without infringing on personal privacy. This enables the creation of training datasets that are both realistic and privacy-preserving.

Professor Yoo has previously conducted research on heterojunction-based 토토사이트 계정탈퇴s and is now expanding into the design and implementation of 토토사이트 계정탈퇴 devices that simulate activation functions used in AI computing.

He plans to further develop this technology by adopting a bulk-type heterojunction structure, which mixes different materials throughout the channel to expand the 토토사이트 계정탈퇴 source. This will increase both the quantity and quality of entropy, ultimately enabling high-speed, high-entropy output.

He is also working toward TRNG-based security device applications. Future directions include TRNG-based PUF (Physically Unclonable Function) devices, encryption circuits using 토토사이트 계정탈퇴 number seeds, and hardware key generators for authentication. His goal is to realize lightweight security solutions suitable for AI and IoT environments and propose architectures applicable to next-generation hardware security platforms.

The team’s study, titled “Heterojunction-Driven Stochasticity: Bi-Heterojunction Noise-Enhanced Negative Transconductance Transistor in Image Generation,” was published in the June issue of Advanced Materials, one of the top international journals in materials and electronic devices (Impact Factor: 26.8, JCR top 2.2%).